Gallium Nitride epitaxial material for next generation devices


Gallium Nitride (GaN) materials are needed to reach the next levels of performance in power and RF electronics, not possible with Silicon semiconductors. 
GaN based High Electron Mobility Transistor (HEMT) devices have high electron mobility and a wide band gap energy that makes them ideally suited for fast switching and high voltage operation under high temperature conditions. Furthermore, GaN has ten times the breakdown voltage of silicon, so it is naturally suited to high voltage operation required in power applications. 

The most significant advantages of GaN devices are:

  • Lower ON-resistance
  • Higher breakdown voltages
  • Higher operating temperatures
  • Higher switching frequencies
  • Low RF losses

These advantages lead to smaller devices with higher power densities, better efficiency and reliability.
At the system level, the energy losses and cooling needs are reduced, the size and weight can be reduced, and the total cost will be lower.

By producing GaN on 6” and 200mm Si substrates in Metal Organic Chemical Vapor Deposition (MOCVD) reactors, the resulting GaN-on-Si epitaxial wafers can be used in standard Si fabs. Integrated Device Manufacturers (IDMs) can continue to utilize existing investments in Si processing lines. 

EpiGaN supplies state-of-the-art GaN-on-Si epiwafers for power switching applications at the 650V node, on 4" and 6" substrates. EpiGaN is also developing and sampling GaN on 200mm Si substrates. On all substrate diameters, excellent characteristics and uniformity are achieved.

A key concept of the technology is in-situ SiN, providing best-in-its-class passivation and superior device reliability. An extensive portfolio of patents and patent applications protects the technology. In-situ SiN allows the use of pure AlN layers as barrier material with the resulting heterostructures having sheet resistance values below 250 Ohm/sq.

EpiGaN's founders were among the pioneers to develop GaN-on-Si technology. While still at imec, they were the first to demonstrate GaN HEMT's on 6" and 200 mm Si substrates. EpiGaN also has extensive experience with growth on SiC substrates.

The EpiGaN team have co-authored more than 100 publications, among them several in the emerging field of GaN high voltage switching devices, demonstrating state-of-the-art results for both material and devices.


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