Efficient power conversion – lower power losses


EpiGaN provides state-of-the-art GaN epitaxial layers deposited on 3, 4 and 6inch SiC-substrates or 3, 4, 6 inch and 200mm HR Si-substrates for sensor applications.

New MEMS and sensor applications are using GaN-on-Si epi material for CO, NO2, strain, pressure and optical sensing.  

Please contact us with your request.

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