EpiGaN provides state-of-the-art GaN epitaxial layers deposited on 4, 6 inch and 200 mm Si-wafers for 650V power applications.
Our typical epi structure includes:
- SiN passivation: Deposited in-situ, SiN gives unparalleled dynamic behavior, enhanced material stability and device reliability
- Heterostructures: AlGaN barrier. Other barriers like AlN and InAlN are possible as well.
- Active GaN channel: High mobility and low sheet resistivity
- HV Buffer: Low leakage, high breakdown voltage, no dispersion and low bow
- Substrate: High quality conductive Silicon (111)
Besides an in-Situ SiN cap layer, we can also grow GaN cap layers.
You can download our standard 650V product brochure here.
EpiGaN delivers superior quality wafer designs to guarantee optimal performance and reliability in power applications.