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GaN-on-SiC epi wafers

EpiGaN to Supply OMMIC with GaN/Si Material for its Newly Opened 150mm RF Power Product Line

Hasselt, Belgium, and Limeil-Brévannes Cedex, France, Oct 5th, 2017
Following the inauguration of Europe’s first 150mm GaN production line at OMMIC, EpiGaN and OMMIC today
announced their partnership on GaN/Si epiwafers supply for RF power products aiming at future 5G
wireless communication.
EpiGaN, global supplier of GaN-on-Si and GaN-on-SiC material solutions for advanced electronic
products, and OMMIC, a key provider of compound semiconductor MMICs and foundry services, are
collaborating in the development of RF GaN/Si technology on 150-mm diameter wafers. They have
jointly collaborated on establishing a production process based on EpiGaN’s differentiating GaN/Si
material technology with in-situ grown SiN passivation. They will cooperate directly to move this
technology to 150-mm diameter wafers, targeting future 5G wireless communication standards, for
which OMMIC last week announced a large project with a 5G equipment supplier.

The advent of the 5G era is going to revolutionize long-distance communications. To provide users
with exceptionally high-speed wireless connections, ultra-low latency and enhanced mobile
broadband, a new semiconductor technology – GaN – is required in applications such as multimedia
streaming, autonomous driving, machine-to-machine communication with billions of interconnected
sensors or Internet-of-Things, to transmit and receive RF signals in the utmost efficient way.
“EpiGaN is honored to team up with OMMIC for scaling up to a 150-mm GaN/Si process line based
on EpiGaN’s differentiating technology addressing products for 5G,” commented EpiGaN CEO Dr
Marianne Germain. “We offer many attractive USPs for RF power, which add value to device
designers, such as in-situ SiN passivation for enhanced device robustness, or very low RF losses up
to 100GHz. We are proud of the high-frequency capability of our material, which enables a very costefficient
and energy-efficient GaN technology for the higher frequency bands targeted by 5G.”

“The next-generation 5G standard will require GaN as an enabling semiconductor technology to
provide a step-up in performance,” stated OMMIC CEO Dr Marc Rocchi. "Only then will the experience
for the end user be superb. Teaming up with EpiGaN is an essential element of our growth strategy
and it enables us to meet the required volume and quality levels for our 5G GaN MMICs.”

You can find the full press release here.

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