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EpiGaN to Showcase its 200mm GaN-on-Si Epi Wafers for 650V Power Switching and RF Power Applications

Hasselt, Belgium, 15 May 2017 --- EpiGaN n.v., a worldwide leading provider of III-nitride epitaxial material solutions for advanced semiconductor manufacturing, will showcase the latest enhancements of its Gallium Nitride on Silicon epi-wafer family that meets industrial specifications for HEMT (High Electron Mobility Transistor) devices at 650V at PCIM Europe 2017 in Nuremberg, Germany, (May 16-18, 2017) as well as at CSMantech in Indian Wells, California, USA (May 22-14, 2017). At PCIM Europe 2017, EpiGaN will exhibit in Hall 6, Booth 432.

Please read the full press release here.

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