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World-leading GaN-on-Si and
GaN-on-SiC epi wafers

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

EpiGaN provided the epitaxial material for this research project:
We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency performance (above 100 GHz) while showing low dc-to-RF dispersion and low gate and drain leakage currents.
The full paper can be found in the IEEE Xplore Digital Library.

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