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Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

We analyse vertical breakdown signatures in normally-off and normally-on AlGaN/GaN HEMTs on Si and SiC substrate for power applications. The probability distribution function of the breakdown voltage VBD values shows mostly a bimodal distribution that is characteristic for substrate/epitaxy type and bias polarity. Different types of distribution functions are tested. The vertical breakdown is found to be a time dependent phenomenon and hypotheses for its initiation are discussed.
The full paper can be found at ScienceDirect.

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