World-leading GaN-on-Si and
GaN-on-SiC epi wafers

NO2 Detection With AlGaN/GaN 2DEG Channels for Air Quality Monitoring

EpiGaN provided the epitaxial material for this research project:
Low-ppb room temperature NO2 detection is demonstrated using recessed AlGaN/GaN heterostructures fabricated on silicon substrates. We employ the 2-D electron gas (2DEG) formed at the interface of the AlGaN/GaN heterostructure for the monitoring of low-ppb NO2 concentrations. The dynamic range of these 2DEG structures can be tuned to that of interest for air quality monitoring (0-100 ppb) by recessing of the open gate areas. We find that in the presence of humidity, the interaction of NO2 with the open gate area reversibly changes 2DEG conductivity. A slope-based detection scheme in combination with periodic heating-induced gas desorption enables continuous air quality (NO2) monitoring.
The full paper can be found in the IEEE Xplore Digital Library

^ Top