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GaN Epitaxy on 200 mm Si Substrates for Power Switching Applications

This extended abstract describes the development of MOCVD processes for GaN on 200 mm Si, to be used in high voltage power electronics. We report on the material quality, uniformity as well as on the electrical performance of the buffer layers. The results show the feasibility of using GaN on 200 mm Si for power switching applications.
For the full paper, please contact WOCSDICE.

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