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GaN-on-SiC epi wafers

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

EpiGaN provided the epitaxial material for this research project:
In this letter, high-output-power-density GaN-based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the first time at 40 GHz. The use of an optimized double heterostructure based on ultrathin barrier AlN/GaN allows both high current density and low leakage current, resulting in high-frequency performance (fmax close to 200 GHz).
The full paper can be found in the IEEE Xplore Digital Library

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