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First AIN/GaN HEMTs power measurement at 18 GHz on Silicon substrate

EpiGaN provided the epitaxial material for this research project:
AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled, AlN/GaN HEMTs promise breakthrough performances, superior to any other III-V nitride-based heterostructure [1]. In particular, this structure should allow the extension of the GaN-based frequency operation due to the possibility to significantly reduce the gate length while maintaining an appropriate gate-to-channel aspect ratio to mitigate short channel effects.
The full paper can be found in the IEEE Xplore Digital Library

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