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World-leading GaN-on-Si and
GaN-on-SiC epi wafers

Characterization of Gallium Nitride Heterostructures for Strain Sensing at Elevated Temperatures

EpiGaN provided the epitaxial material for this research project:
Structural health monitoring of physical stimuli such as strain within extreme harsh environments (high temperature, chemically caustic, high shock, high pressure, and high radiation) is currently limited. More specifically, critical structural components used in aircraft, combustion engines, and down-hole environments can utilize strain sensors to monitor structural state of health to prevent catastrophic failures and study mechanical fatigue within extreme environments. Unfortunately, traditional metal foil strain gauges have low sensitivity and silicon-based devices are limited to temperatures below 200 degrees C and benign environments due to junction leakages and material degradation. Primarily due to its large bandgap (3.4 eV) gallium nitride (GaN) offers a promising material platform for sensing within extreme environments because it is temperature resistant (electrically stable above 600 degrees C), chemically stable, and radiation-hardened. Additionally, when aluminum gallium nitride (AlGaN) is grown on GaN it creates a high electron density sheet at the interface known as a 2-dimensional electron gas (2DEG) layer. The gauge factor for AlGaN/GaN heterostructure devices is comparable to silicon devices and higher than metal foil gauges.
For the full paper, please contact IWSHM.

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