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Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

EpiGaN provided the epitaxial material for this research project:
A report is presented on high-speed 100 nm AlN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistive silicon substrate. The device delivers an extrinsic peak transconductance gm=530 mS/mm, a maximum current of 1.74 A/mm, and current gain and maximum oscillation cutoff frequencies of ft=103 GHz and fmax=162 GHz, which represent the highest cutoff frequencies for AlN/GaN HEMTs on silicon substrate. The results show the outstanding potential of this material system grown on silicon for low-cost high-power millimeter-wave applications.
The full paper can be found in the IET Digital Library.

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