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1900 V 1.6 mOhm.cm2 AlN/GaN-on-Si power devices realized by local substrate removal

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 µm. A fully scalable local substrate removal technique was developed to dramatically enhance the off-state breakdown voltage of the transistors. The three-terminal breakdown voltage of these devices using a gate-drain distance of 15 µm increased significantly, from 750 to 1.9 kV, after local substrate removal. The high two-dimensional electron gas carrier density (2.3 * 1013 cm-2) associated with the low sheet resistance enables a record combination of a specific on-resistance (1.6 mOhm.cm2) and high breakdown voltage for GaN-on-Si transistors.
The full paper can be found at iopscience.iop.org.

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