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World-leading GaN-on-Si and
GaN-on-SiC epi wafers

Meet the EpiGaN team at the International Workshop on Nitride Semiconductors (IWN) in Orlando, Florida

The 2016 International Workshop on Nitride Semiconductors will take place in Orlando, USA from October 2-7, 2016.
EpiGaN will present the latest GaN on Si and GaN on SiC product solutions at this premier biennial-held meeting covering all aspects of III-Nitride Semiconductor science, engineering and industry.  
Through continuous material and process innovation and quality improvements, EpiGaN is addressing the requirements of the Electronic industry, offering advances in GaN product solutions such as:

  • GaN on Si epiwafers (up to 200mm)  for
    • 600V power switching with state-of-the-art leakage and dispersion performance
    • RF power with significantly improved RF loss performance up to 50GHz
    • Sensor device applications
  • GaN on SiC epiwafers for RF power
  • Unique and customized layer designs with binary AlN barriers capped with in-situ SiN passivation for lowest sheet resistivity
  • Easy access to GaN devices on EpiGaN technology through custom projects on a proven 200mm fab process

You are cordially invited to visit the EpiGaN booth and learn about latest progress for our GaN product solutions.
If you would like to schedule an individual meeting with the EpiGaN team show please feel free to contact Dr. Markus Behet, CMO.

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