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World-leading GaN-on-Si and
GaN-on-SiC epi wafers

Join the EpiGaN team at two top Compound Semiconductor events in March

EpiGan will be represented at the Power & Compound Semiconductor International Forum 2019 at the Semicon China show on March 21&22 in Shanghai
and at the Compound Semiconductor International Conference in Brussels/Belgium on March 26&27!

The "Power & Compound Semiconductor International Forum 2019", which is one of the largest professional event about power and compound semiconductor industry in Asia, will be organized in conjunction with SEMICON China 2019 on Mar. 21&22.  It focuses on topics including: Wide Band Gap Power Electronics, Optoelectronics, Compound Semiconductor in Communications, and Emerging Power Device Technology.

The 9th Compound Semiconductor International Conference will take place the week after in Brussels/Belgium and will focus on breakthrough in device technology, offer insights into current status and the evolution of compound semiconductor devices and technology and provide details of advances in tools, processes that will help drive up fab yields throughputs.

EpiGaN’s CMO, Dr. Markus Behet, will present at both events on the latest status of EpiGaN’s GaN on Si technology for 5G applications.The EpiGaN team is looking forward meeting you at these global events and discussing our latest GaN material solutions for RF power, power switching and sensor applications like

  • Up to 200mm GaN/Si and 150mm GaN/SiC epitaxial wafer solutions
  • In-situ SiN passivation in combination with (Al,Ga)N and (Al,In)N barriers
  • Lowest RF losses and leakage for GaN-on-Si wafers
  • Device access on EpiGaN technology through foundry partners 


We look forward learning about your needs and meeting you at these events!  
 

 
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