Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France and EpiGaN nv in Belgium have claimed a record combination of specific on-resistance and breakdown voltage for a double heterostructure field-effect transistor (DHFET) using a gallium nitride (GaN) channel and aluminium nitride (AlN) barrier on silicon (Si) substrate, which can be found at Compound Semiconductor.