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World-leading GaN-on-Si and
GaN-on-SiC epi wafers

EpiGaN will showcase the latest GaN epiwafer solutions at PCIM Europe

This year’s PCIM Europe exhibition and conference will take place from May 10-12, 2016 in Nürnberg.
PCIM Europe is the international leading exhibition and conference for power electronics, intelligent motion, renewable energy and energy management.

We will present our newest GaN on Si product solutions for power switching applications at this global event such as

  • GaN on Si epiwafers for
    • 600V power switching with state-of-the-art leakage and dispersion performance (up to 200mm diameter)
    • RF power with significantly improved RF loss performance
    • Sensor device applications

 

  • unique and customized layer designs with binary AlN barriers capped with in-situ SiN for lowest sheet resistivities

Come and learn about recent progress for GaN/Si wafer technologies and be invited to talk to our experts at the EpiGaN booth.

EpiGaN’s CEO Dr. Marianne Germain will participate in a podium’s discussion on "GaN - Volume, Production and Cost" on May 11, 2pm -3pm at the Fach Forum in Hall 6 Booth 248, organized by Bodo’s Power Systems.
EpiGaN’s CMO Dr. Markus Behet will also give a presentation entitled “GaN on silicon - a truly revolutionary semiconductor technology matures” on May 11, 11:20am at the Exhibitor Forum in Hall 7 Booth 260.
 

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