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World-leading GaN-on-Si and
GaN-on-SiC epi wafers

EpiGaN to showcase leading-edge GaN/Si epiwafer solutions at SEMICON Europe 2015

SEMICON Europe – the largest trade fair for the semiconductor industry in Europe – returns to Dresden October 6-8  
 
EpiGaN, the leading European-based provider of large-diameter Ga-on-Si and GaN-on-SiC epitaxy wafers for power electronics, RF power and sensor  device manufacturers worldwide, will showcase its latest product solutions at SEMICON Europe in Dresden. Through continuous material and process innovation and quality improvements, EpiGaN is addressing the requirements of the Electronic industry, offering advances in semiconductor substrates products such as:

  • GaN on Si epiwafers for 600V power switching, RF power and sensor device applications (for power switching up to 200mm wafer diameter)
  • GaN on SiC epiwafers for RF power (up to 100mm wafer diameter)
  • unique and customized layer designs with binary AlN barriers capped with in-situ SiN for lowest sheet resistivities


Come learn about recent progress for GaN/Si and GaN/SiC wafer technologies and be invited to talk to our experts from EpiGaN at the DSP booth 2064 in the Allee Des Clusters Hall.
EpiGaN’s CEO Dr. Marianne Germain will also present on “Large diameter GaN-on-Si epiwafers for Power Switching and RF Power electronics with enhanced efficiency” on October 6, at 2:15pm in the TechARENA 1.
 

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