World-leading GaN-on-Si and
GaN-on-SiC epi wafers

EpiGaN to exhibit at Semicon Taiwan 2017

The Semicon Taiwan exhibition will take place from Sept 13-15, 2017 in Taipei, Taiwan. Over 700 exhibitors and 43,000 visitors from the globe are expected.
EpiGaN will have a booth presence  (# 1728) and will inform about the latest GaN on Si and GaN on SiC product solution upgrades such as GaN on Si epiwafers up to 200mm diameter for

  • RF power for 5G wireless applications with significantly improved RF loss performance and 600V power switching with state-of-the-art leakage and dispersion performance
  • 150mm GaN/SiC for RF power applications
  • Unique and customized layer designs with binary AlN barriers capped with in-situ SiN passivation for lowest sheet resistivities
  • Custom chip design support on EpiGaN’s GaN technology
Please come and visit us at the EpiGaN booth and learn about the recent progress on our GaN/Si and GaN/SiC wafer technologies.If you would like to schedule an individual meeting during the Semicon Taiwan show please feel free to contact Dr. Markus Behet, CMO, markus.behet@epigan.com.

You are also cordially invited to attend the EpiGaN presentation “From Hype to Reality: GaN technology - where are we today?” on Sept 15, 10.45-11:00 at #3120, 1F, TWTC Nangang Exhibition Hall.

^ Top