In a new webtalk on Power Electronics News, Dr. Markus Behet, EpiGaN CMO, highlights the company’s latest GaN technology developments for 600V power switching and RF power for 5G.
These latest product generations offer lowest RF losses and dispersion effects utilizing AlN/GaN HEMTs with in-situ SiN passivation on large diameter epiwafers that enable best-in class device performance.
You can watch the webtalk here.