Based on continuous R&D in over 10 years of GaN-on-Si research
EpiGaN supplies state-of-the-art GaN-on-Si epiwafers for power switching applications at the 600V node, on 4" and 6" substrates. EpiGaN is also developing and sampling GaN on 200mm Si substrates. On all substrate diameters excellent characteristics and uniformity are achieved.
A key concept of the technology is in-situ SiN, providing best-in-its-class passivation and superior device reliability.
The technology is protected by an extensive portfolio of patents and patent applications, part of which is fully owned by EpiGaN and the other part which is licensed from imec.
Continuous improvement is guaranteed by intensive internal R&D, partnerships with customers as well as by participation in several international projects, funded by public authorities such as the European Commission and the European Space Agency. Examples of the latter are the FP7 HipoSwitch project, the ENIAC E2COGaN project and the ESA NEWPIE project.
EpiGaN's founders were among the pioneers to develop GaN on Si technology.
While still at imec, they were the first to demonstrate GaN HEMT's on 6" and 8" Si substrates. EpiGaN also has extensive experience with growth on SiC substrates.
The EpiGaN team have co-authored more than 100 publications, among them several in the emerging field of GaN high voltage switching devices, demonstrating state-of-the-art results for both material and devices.
Please contact us to see how EpiGaN can help your business