Welcome to EpiGaN
Gallium Nitride on Silicon (GaN-on-Si) is the key technology enabler for clean energy generation and more efficient power conversion. EpiGaN focuses on providing world-leading III-nitride epitaxial material solutions for top performance devices.
EpiGaN gives device manufacturers access to a unique, proven and powerful technology. It will lead its customers, GaN Integrated Device Manufacturers (IDM), to successful and early positioning in key market segments such as power supplies for consumables, hybrid electric vehicles, solar inverters, RF power for base stations, CATV systems, smart grids, UPS systems and AC Drives, thanks to the use of wide bandgap semiconductors.
On May 21st 2012, EpiGaN has opened its new production site in the presence of Flemish Minister Mrs Ingrid Lieten and Limburg Governor Mr Herman Reynders. The company selected the Corda Campus Hasselt (formerly Research Campus Hasselt) as the ideal location for the volume production of their gallium nitride epitaxial material. You can find the full press release here.
EpiGaN has successfully commissioned two new MOCVD systems, able to operate either in multiple 6 or 8 inch configuration. It is using the systems to supply 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices. The next generation of 200 mm GaN-on-Silicon wafers is available for sampling. The reactors were installed and commissioned by AIXTRON Europe at the company's purpose-built, state-of-the-art facility located in Corda Campus Hasselt, Hasselt, Belgium. You can find the full press release here.
EpiGaN Announces Appointment of Claus Geisler as Chairman of the Board of Directors. See the details in the NEWS section.
IEMN and EpiGaN have claimed a record combination of specific on-resistance and breakdown voltage. See the details in the NEWS section (In The Press).