Welcome to EpiGaN

Gallium Nitride on Silicon (GaN-on-Si) is the key technology enabler for clean energy generation and more efficient power conversion. Based on imec technology, the start-up "EpiGaN" focuses on providing world-leading III-nitride epitaxial material solutions for top performance devices.

EpiGaN gives device manufacturers access to a unique, proven and powerful technology. It will lead its customers to successful and early positioning as GaN device suppliers in key market segments such as power supplies for consumables, hybrid electric vehicles, solar inverters, RF power for base stations, smart grid... thanks to the use of wide bandgap semiconductors.

On May 21st 2012, EpiGaN has opened its new production site in the presence of Flemish Minister Mrs Ingrid Lieten and Limburg Governor Mr Herman Reynders. The company selected the Research Campus Hasselt as the ideal location for the volume production of their gallium nitride epitaxial material. You can find the full press release here.

EpiGaN has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It is using the systems to supply 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices. The next generation of 200 mm GaN-on-Silicon wafers is available for sampling. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the company’s purpose-built, state-of-the-art facility located in Research Campus Hasselt, Hasselt, Belgium. You can find the full press release here.