The growing demand for high-speed, high-temperature and high power-handling capabilities has made the semiconductor industry rethink the choice of materials used as semiconductors. For instance, as various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain Moore’s Law. But also in power electronics, the properties of silicon are no longer sufficient to allow further improvements of conversion efficiency.
Due to its unique characteristics (high maximum current, high breakdown voltage, and high switching frequency), GaN (Gallium Nitride) is a unique material of choice to solve energy problems of the future. GaN based systems have higher power efficiency, thus reducing power losses, switch at higher frequency, thus reducing size and weight.
GaN technology is used in numerous high-power applications such as industrial, consumer and server power supplies, solar, AC drive and UPS inverters, and hybrid and electric cars. Furthermore, GaN is ideally suited for RF applications such as cellular base stations, radars and cable TV infrastructure in the networking, aerospace and defense sectors, thanks to its high breakdown strength, low noise figure and high linearity,
EpiGaN manufactures GaN-on-Si and GaN-on-SiC epitaxial wafer materials and supplies these to integrated device manufacturers to create high performance power and RF devices.